Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor …
Hot electron transistors (HETs) containing two-dimensional (2D) materials promise great potential in high-frequency analog and digital applications. Here, we experimentally …
T Jabegu, N Li, A Okmi, B Tipton… - Advanced Electronic …, 2024 - Wiley Online Library
The difficulty of achieving ohmic contacts is a long‐standing challenge for the development and integration of devices based on 2D materials, due to the large mismatch between their …
The van der Waals interactions (vdW) between π-conjugated molecules offer new opportunities for fabricating heterojunction-based devices and investigating charge transport …
We perform a comparative study on the transfer velocity of charge carriers across two- dimensional and (2D) three-dimensional (3D) graphene-silicon and 3D-3D Au-silicon …
Owing to the atomic thickness of graphene, the out‐of‐plane velocity of carriers is entangled with the thickness of graphene layer as well as the quasiparticle lifetime by means of the …
In this paper the extended method of lines (E-MoL) is proposed for the analysis of multilayer graphene-loaded three dimensional structures in cylindrical coordinates. Accordingly, the …
Controlling the Schottky barrier height (ϕ B) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene …