Narrow bandgap inorganic ferroelectric thin film materials
L Wu, Y Yang - Advanced Materials Interfaces, 2022 - Wiley Online Library
Harvesting solar energy to solve the energy crisis and environmental pollution is a research
hotspot in the photovoltaic industry today. Conventional ferroelectric materials have a …
hotspot in the photovoltaic industry today. Conventional ferroelectric materials have a …
Unlocking the performance of next-generation non-volatile capacitive memory devices with Ti-doped ZnO nano wires via pulsed laser deposition
This paper investigates the impact of titanium (Ti) doping on zinc oxide (ZnO) nano wires
(NWs) in non-volatile capacitive memory devices (NVCMDs) through fabrication and …
(NWs) in non-volatile capacitive memory devices (NVCMDs) through fabrication and …
Glancing angle fabricated Au/ZrO2 nanoparticles based device for non‑volatile capacitive memory application
The effect of structural modulations on non-volatile capacitive memory devices is reported in
this paper. The synthesis of zirconium dioxide (ZrO2) thin film (TF) was done using an …
this paper. The synthesis of zirconium dioxide (ZrO2) thin film (TF) was done using an …
Dielectric relaxation and domain-wall freezing in (CH3NH3)5Bi2Cl11 ferroelectric crystal
For the first time, the dielectric relaxation and domain-wall freezing are reported for the
single crystal of (CH3NH3) 5Bi2Cl11 ferroelectric, which was tested in wide ranges of …
single crystal of (CH3NH3) 5Bi2Cl11 ferroelectric, which was tested in wide ranges of …
Enhanced electrical properties of BiFeO3 films deposited on (Ba0. 5Sr0. 5) TiO3/Si substrates
XY Zhang - Journal of Ceramic Processing Research, 2012 - dbpia.co.kr
Metal-ferroelectric-insulator-semiconductor (MFIS) capacitor with a BiFeO3 ferroelectric film
and a Ba0. 5Sr0. 5TiO3 buffer layer on a silicon substrate was fabricated and characterized …
and a Ba0. 5Sr0. 5TiO3 buffer layer on a silicon substrate was fabricated and characterized …