Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition
J Jeong, Y Han, H Sohn - Journal of Alloys and Compounds, 2022 - Elsevier
The electrical properties of La-doped ZrO 2 thin films were studied for an application to cell
capacitors in dynamic random-access memory. La-doped ZrO 2 thin films were deposited by …
capacitors in dynamic random-access memory. La-doped ZrO 2 thin films were deposited by …
Enhancing chemisorption efficiency and thin-film characteristics via a discrete feeding method in high-k dielectric atomic layer deposition for preventing interfacial …
Interfacial layer formation between electrodes and insulators is a well-known issue in metal–
insulator–metal capacitors and can severely limit their electrical properties. In this study, we …
insulator–metal capacitors and can severely limit their electrical properties. In this study, we …
Suppressing Interfacial Layer Formation in ZrO2-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier
S Lee, HH Seol, MK Nam, DH Han, D Kim… - ACS Applied …, 2024 - ACS Publications
The TiO x N y interfacial layer formed by an O3 reactant during the atomic layer deposition
(ALD) of ZrO2 on a TiN electrode is a challenge to further scaling dynamic random-access …
(ALD) of ZrO2 on a TiN electrode is a challenge to further scaling dynamic random-access …
Introducing Y2O3 passivation layer for utilizing TiSiN electrode on ZrO2-based metal-insulator-metal capacitor applications
This study investigates the degradation and improvement of the dielectric properties of ZrO 2-
based metal-insulator-metal (MIM) capacitors using TiSiN electrodes. As dynamic random …
based metal-insulator-metal (MIM) capacitors using TiSiN electrodes. As dynamic random …
[HTML][HTML] Novel deuterated cyclopentadienyl zirconium/hafnium precursors for atomic layer deposition of high-performance ZrO2/HfO2 thin films
The need to improve the electrical properties of ZrO 2 and HfO 2 thin films deposited by
atomic layer deposition (ALD), which is widely used in the field of microelectronics, is …
atomic layer deposition (ALD), which is widely used in the field of microelectronics, is …
Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO2 Insulators
G Zheng, YL He, B Zhu, X Wu… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
MIM capacitors have been widely investigated as passive devices in integrated circuits. In
this work, Ti-doped ZrO2 (ZTO) thin films prepared by plasma-enhanced atomic layer …
this work, Ti-doped ZrO2 (ZTO) thin films prepared by plasma-enhanced atomic layer …
Hybrid reactant-enabled atomic layer deposition of HfO2 for enhancing metal-insulator-metal capacitor fabricated on TiN electrode
IG Lee, WY Park, YU Ryu, W Jeon - Materials Today Communications, 2024 - Elsevier
Dynamic random access memory (DRAM) capacitors rely on the high-performance of metal-
insulator-metal (MIM) structures for stable operation. Among the materials investigated for …
insulator-metal (MIM) structures for stable operation. Among the materials investigated for …
Investigating dielectric relaxation currents for a deeper understanding of capacitance and interface in metal-insulator-metal capacitor
Accurate capacitance measurement is critical for the development of metal–insulator–metal
(MIM) capacitors for semiconductor devices. In this study, we compare the frequency …
(MIM) capacitors for semiconductor devices. In this study, we compare the frequency …
Equivalent oxide thickness scalability of Zr-rich ZrHfO2 thin films by Al-doping
With ultra-miniaturization of dynamic random-access memory (DRAM), it is very important to
achieve equivalent-oxide-thickness (EOT) scaling of capacitors using materials applied to …
achieve equivalent-oxide-thickness (EOT) scaling of capacitors using materials applied to …