Structural and magnetic properties of Mn 5 (Si x Ge 1-x) 3 thin films were investigated.
Ferromagnetic Mn 5 Ge 3 and anti-ferromagnetic Mn 5 Si 3 thin films have been synthesized …

Mn 5 Ge 3 can be used as a ferromagnetic contact material to fabricate spintronic devices.
Here, we show that Mn 5 Ge 3 can be fabricated with a simple germanidation process by …

We have studied the stability of manganese germanide thin films grown on Ge (111)
substrates by three different growth methods: solid phase epitaxy, reactive deposition …

Mn5Ge3 is a ferromagnetic hexagonal crystal promising for spintronics and
magnetocalorics. A systematic study and analysis of the magnetic properties of the Mn5Ge3 …

Magnetic properties of Mn 5 Ge 3 C 0.7 thin films grown by molecular beam epitaxy have
been studied. SQUID-VSM measurements and magnetic force microscopy have been used …

Extensive X-band and Q-band FMR experiments have been performed in the Mn 5 Ge 3
epitaxial films with thicknesses varying between 4.5 and 68 nm. FMR signals were recorded …

Abstract The Mn 5 Ge 3 exhibits a wide range of fascinating properties such as high spin
polarization up to 42%, large spin diffusion lengths, near-room Curie temperature, and …

The very first stages of the non-diffusive growth of Mn 5 Ge 3 thin films on Ge (111)
substrates are characterized by several techniques. Mn 5 Ge 3 films are grown by molecular …

Abstract Epitaxial mosaic-like Mn 5 Ge 3 thin films were grown on Ge (001) substrates using
reactive deposition epitaxy process from Mn deposition or Mn-Ge co-deposition at a …

Mn 55 NMR was used to investigate the effect of carbon doping on the local magnetic
anisotropy in Mn 5 Ge 3 epitaxial films (space-group P 6 3/mcm). It was found that carbon …