Detection of cancer cells and pathogens at an early stage is crucial for improving survival
rates, driving extensive research into GaN-HEMT-based biosensors. AlGaN/GaN high …

This work investigates the influence of Single Event Transient (SET) effect on Double
Channel Dual Gate (DC-DG) AlGaN/GaN HEMT using TCAD simulations. Both Single …

Silicon carbide (SiC) is essential for advancing high-tech industries such as new energy
vehicles and AI data centers. However, its anisotropic properties pose challenges to the …

Abstract A novel AlGaN/GaN HEMT is proposed to improve its single event transient (SET)
effect and breakdown characteristics. The device features an AlGaN back barrier layer and a …

Abstract The AlN/GaN heterostructure on the AlGaN back barrier with different buffer layer
structures using a silicon carbide (SiC) substrate was investigated in this work. This study …

This work investigates the impact of barrier layer thickness on DC and RF performance of a
GaN HEMT device, targeting the low noise high gain application. An optimisation workflow …

In this study, an AlGaN/GaN high electron mobility transistor with lateral inhomogeneous
AlGaN barrier layer (LI-AlGaN HEMT) is proposed and studied systematically. The LI-AlGaN …

Abstract Modeling of GaN HEMTs is a hot field of research. The convergence and accuracy
of circuit simulations heavily rely on the compact models used. For technology optimization …