Abstract Single Event Effects (SEEs) induced by heavy ions, protons, and neutrons become
an increasing limitation of the reliability of electronic components, circuits, and systems, and …

While single bit upsets on memories and storage elements are mitigated with either the use
of redundancy and/or error correction codes, Multiple-Cell-Upsets (MCU) may become a …

Heavy ion, neutron, and laser experimental data are used to evaluate the effectiveness of
various single event latchup (SEL) hardening strategies, including silicon-on-insulator (SOI) …

This article presents Listas de Eventos Localizando Anomalías al Preparar Estadísticas
(LELAPE), an easy-to-use tool that aims at classifying the single-event upsets (SEUs) that …

This article reviews state-of-the-art techniques for the evaluation of the effect of radiation on
static random access memory (SRAM). We detailed irradiation test techniques and results …

In previous works, we have demonstrated the importance of dynamic mode testing of SRAM
components under ionizing radiation. Several types of failures are difficult to expose when …

This paper presents a single event upset (SEU) sensitivity characterization at ultralow bias
voltage of three generations of commercial off-the-shelf static random access memories …

This article investigates the transient dose rate effect (TDRE) on the system-in-package (SiP)
SZ0501 experimentally. A specialized program is designed for TDRE tests. With the …

Electronic memories are ubiquitous components in electronic systems: they are used to
store data, and can be found in all manner of industrial, automotive, aerospace …

Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs Page 1
2620 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 62, NO. 6, DECEMBER 2015 …