III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

Abstract Growth of InGaN/GaN light-emitting devices on nonpolar or semipolar planes offers
a viable approach to reducing or eliminating the issues associated with polarization-related …

Using micro-Raman spectroscopy, we have studied the vibrational properties of GaN and
Al0. 5Ga0. 5N/GaN long period superlattices SLs grown on Si111. Crack-free areas of GaN …

We have made AlGaN∕ GaN high electron mobility transistors with a Si 3 N 4 passivation
layer that was deposited in situ in our metal-organic chemical-vapor deposition reactor in the …

This article presents a theoretical analysis of dislocation behavior and stress relaxation in
semipolar III-nitride heteroepitaxy, eg, for Al x Ga 1− x N and In y Ga 1− y N layers grown on …

In situ stress monitoring has been employed during metalorganic chemical vapor deposition
of AlGaN/GaN distributed Bragg reflectors DBRs. It was found that the insertion of multiple …

Heteroepitaxial growth of Al x Ga 1− x N alloy films on GaN results in large tensile strain due
to the lattice mismatch. During growth, this strain is partially relieved both by crack formation …

Using in situ wafer-curvature measurements of thin-film stress, we determine the critical
thickness for strain relaxation in Al x Ga 1− x N∕ Ga N heterostructures with 0.14⩽ x⩽ 1⁠ …

We demonstrate that the insertion of low-temperature AlGaN interlayers is effective in
reducing mismatch-induced tensile stress and suppressing the formation of cracks during …

The strain-relaxation phenomena during the early stages of plasma-assisted molecular-
beam epitaxy growth of lattice-mismatched wurtzite (0001) AlN/GaN heterostructures have …