Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature
M Myronov, P Jahandar, S Rossi… - Advanced Electronic …, 2024 - Wiley Online Library
Efficient p‐and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx)
semiconductor epilayers, grown by chemical vapor deposition on a standard Si (001) …
semiconductor epilayers, grown by chemical vapor deposition on a standard Si (001) …
Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy
A Giunto, LE Webb, T Hagger… - Physical Review …, 2023 - APS
GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and
high-mobility transistors. These devices require the use of doped GeSn regions, achieved …
high-mobility transistors. These devices require the use of doped GeSn regions, achieved …
Effects of ion implantation with arsenic and boron in germanium-tin layers
Ion implantation is widely used in the complementary metal–oxide–semiconductor process,
which stimulates to study its role for doping control in rapidly emerging group IV Ge 1− x Sn …
which stimulates to study its role for doping control in rapidly emerging group IV Ge 1− x Sn …
Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are
implemented to continue increasing performances at constant footprint. Strained and …
implemented to continue increasing performances at constant footprint. Strained and …
Toward high-performance and reliable Ge channel devices for 2 nm node and beyond
H Arimura, E Capogreco, A Vohra… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
This paper describes our recent research progress on high-mobility Ge-channel n/pFETs.
Gate stack, junction and contact are the key challenging components of Ge n/pFETs …
Gate stack, junction and contact are the key challenging components of Ge n/pFETs …
[HTML][HTML] Evolution of phases and their thermal stability in Ge–Sn nanofilms: a comprehensive in situ TEM investigation
A Minenkov, H Groiss - Journal of Alloys and Compounds, 2021 - Elsevier
Abstract The group IV Ge-Sn system is a promising candidate for a variety of electronic and
photonic applications due to its tunable bandgap and compatibility with Si-based …
photonic applications due to its tunable bandgap and compatibility with Si-based …
Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0. 92Sn0. 08
In this article we provide a comparative and systematic study on contact formation for
germanium-tin (GeSn) thin films containing a high percentage of Sn (8 at.%). 20 nm of Nickel …
germanium-tin (GeSn) thin films containing a high percentage of Sn (8 at.%). 20 nm of Nickel …
[HTML][HTML] Area-selective deposition of germanium on patterned graphene/monolayer molybdenum disulfide stacks via dipole engineering
Heterogeneous integration of two-dimensional materials and the conventional
semiconductor has opened opportunities for next-generation semiconductor devices and …
semiconductor has opened opportunities for next-generation semiconductor devices and …
Thermal Stability and Sn Segregation of Low-Resistance Ti/p+-Ge0.95Sn0.05 Contact
The thermal stability and contact property of Ti/p+-Ge 0.95 Sn 0.05 contact are investigated
for the first time. Sn segregation is observed under the Ti/GeSn interface after the post-metal …
for the first time. Sn segregation is observed under the Ti/GeSn interface after the post-metal …
Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices
The peculiarities of heavily boron‐doped germanium, selectively grown at low temperature
by means of a cyclic deposition and etch chemical vapor deposition process, are …
by means of a cyclic deposition and etch chemical vapor deposition process, are …