Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

Single photon sources are key components for quantum technologies such as quantum
communication, computing and metrology. A key challenge towards the realization of global …

Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Results: Broad area lasers with 100µm stripe widths were fabricated from this structure. The
wafer was then cleaved into 7.8 mm long laser bars. All devices were tested with the n-side …

We present a theory of the electronic structure of GaN/AlN quantum dots (QD's), including
built-in strain and electric-field effects. A Green's function technique is developed to …

By metal-organic vapor-phase epitaxy, we have fabricated InAs quantum dots (QDs) on
InGaAs/GaAs metamorphic buffer layers on a GaAs substrate with area densities that allow …

We demonstrated the 1.52 μm light emission at room temperature from self-assembled InAs
quantum dots embedded in the In 0.45 Ga 0.55 As strain-reducing layer. By capping InAs …

Intermediate band solar cells (IBSCs) fabricated to date from In (Ga) As/GaAs quantum dot
arrays (QD-IBSC) exhibit a quantum efficiency (QE) that extends to below bandgap …

We review the present status of the rapidly developing field of semiconductor laser diodes
based on self-organized quantum dots (QDs). Several milestones have been achieved since …

A theoretical and experimental study of the optical gain, refractive index change, and
linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is reported. These …