The role of power device technology in the electric vehicle powertrain

E Robles, A Matallana, I Aretxabaleta… - … Journal of Energy …, 2022 - Wiley Online Library
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …

Low-temperature copper sinter-joining technology for power electronics packaging: A review

Y Wang, D Xu, H Yan, CF Li, C Chen, W Li - Journal of Materials …, 2024 - Elsevier
Low-temperature copper (Cu) sinter-joining technology has attracted increasing attention in
high-power electronic device packaging because of its low material cost, good electrical and …

Synergistically enhanced Si3N4/Cu heterostructure bonding by laser surface modification

Y Song, H Zhu, D Liu, X Song, H Bian, W Fu… - Journal of Materials …, 2024 - Elsevier
A bonding approach based on laser surface modification was developed to address the
poor bonding between Si 3 N 4 ceramic and Cu. The bonding mechanism in Si 3 N 4/Cu …

Microstructural and mechanical evolution of silver sintering die attach for SiC power devices during high temperature applications

H Zhang, W Wang, H Bai, G Zou, L Liu, P Peng… - Journal of Alloys and …, 2019 - Elsevier
Silver sintering is a promising die attach technology to ensure high thermal reliability. The
long-term reliability of SiC device sintered by nano-Ag paste has been evaluated by the high …

[HTML][HTML] Microstructural evolution, fracture behavior and bonding mechanisms study of copper sintering on bare DBC substrate for SiC power electronics packaging

X Liu, S Li, J Fan, J Jiang, Y Liu, H Ye… - Journal of Materials …, 2022 - Elsevier
Robust bonding of Cu quasi-nanoparticles sintering for Ag coated chip and bare copper
substrate was achieved. The effect of temperature, pressure and time on the sintering …

[HTML][HTML] Macroscale and microscale structural mechanisms capable of delaying the fracture of low-temperature and rapid pressureless Ag sintered electronics …

D Kim, MS Kim - Materials Characterization, 2023 - Elsevier
This study focuses on the realization of rapid Ag sintering in 10 minutes under various
temperature conditions without pressure in the air. In each temperature range from 175° C to …

Microstructural evolution and degradation mechanism of SiC–Cu chip attachment using sintered nano-Ag paste during high-temperature ageing

F Yang, W Zhu, W Wu, H Ji, C Hang, M Li - Journal of Alloys and …, 2020 - Elsevier
The high-temperature reliability of nano-Ag pastes on bare Cu substrates is of great
significance in power electronics. Although Cu metallization in sintered joints is susceptible …

Improved thermal conductivity and reliability through graphene reinforced nanopaste for power devices in new energy vehicles

H Zhang, S He, G Qu, Z Deng, G Zou… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
Ag nanopaste is one of the most promising die-attach materials in power devices. In this
work, robust sintered SiC devices are achieved by using graphene reinforced Ag nanopaste …

Robust bonding and thermal-stable Ag–Au joint on ENEPIG substrate by micron-scale sinter Ag joining in low temperature pressure-less

C Chen, Z Zhang, Q Wang, B Zhang, Y Gao… - Journal of Alloys and …, 2020 - Elsevier
Robust bonding and thermal-stable sinter Ag joining on an Au finished substrate was first
time achieved for use in SiC power modules. Five kinds of Ag paste, including different …

Pressureless sintered-silver die-attach at 180° C for power electronics packaging

M Wang, YH Mei, J Jin, S Chen, X Li… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Die attachment by pressureless silver sintering at<; 200° C is significant for power electronic
packaging because it can relieve residual thermo-mechanical stress and avoid chip …