Analysis of photon detection efficiency and dynamic range in SPAD-based visible light receivers

S Gnecchi, NAW Dutton, L Parmesan… - Journal of Lightwave …, 2016 - opg.optica.org
We investigate the photon detection efficiency (PDE) and the dynamic range for digital
silicon photomultipliers (dSiPMs) over a selection of design parameters: dSiPM unit cell …

A single photon avalanche detector in a 180 nm standard CMOS technology

I Malass, W Uhring, JP Le Normand… - 2015 IEEE 13th …, 2015 - ieeexplore.ieee.org
We present the performance characteristics of a Single Photon Avalanche Detector
fabricated in a 180 nm standard CMOS image sensor technology. The SPAD implemented …

Evaluation of size influence on performance figures of a single photon avalanche diode fabricated in a 180 nm standard CMOS technology

I Malass, W Uhring, JP Le Normand, N Dumas… - … Integrated Circuits and …, 2016 - Springer
We present the performance characteristics of a single photon avalanche diode (SPAD)
fabricated in a 180 nm standard CMOS image sensor technology. The SPAD structure was …

Parallelized Integrated Time-Correlated Photon Counting System for High Photon Counting Rate Applications

I Malass, W Uhring, JP Le Normand… - … Count. Fundam. Appl, 2018 - books.google.com
Time-correlated single-photon counting (TCSPC) applications usually deal with a high
counting rate, which leads to a decrease in the system efficiency. This problem is further …