Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors
Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …
Spectrally Tunable Broadband Gate-All-Around InAsP/InP Quantum Discs-in-Nanowire Array Phototransistors with a High Gain-Bandwidth Product
High-performance broadband photodetectors offering spectral tunability and a high gain-
bandwidth product are crucial in many applications. Here, we report on a detailed …
bandwidth product are crucial in many applications. Here, we report on a detailed …
Enhanced Electrical Performance of InAs Nanowire Field-Effect Transistors Based on the Y2O3 Isolation Layer
YF Jiang, JM Tian, T Li, S Li, BJ Wang… - ACS Applied Materials …, 2024 - ACS Publications
Nanowire (NW) field-effect transistors (FETs) have great potential in next-generation
integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent …
integrated circuits. InAs NWs are suitable for N-type transistors because of their excellent …
Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate
X Wang, X Yang, T Yang - Vacuum, 2025 - Elsevier
The feature size of advanced Si-based chips is approaching its physical limit, and it is
difficult to continue Moore's Law by simply pursuing the technical route of miniaturizing …
difficult to continue Moore's Law by simply pursuing the technical route of miniaturizing …
The role of the surface passivation in the mechanical properties of wurtzite InAs and InP nanowires: first-principles calculations
LC Bassotto, IZ da Silva, CL dos Santos - The European Physical Journal …, 2022 - Springer
We investigate the effect of surface passivation on the mechanical properties of InAs and InP
nanowires (NWs) as a function of diameter using density-functional theory. The …
nanowires (NWs) as a function of diameter using density-functional theory. The …
Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD
X Wang, H Pan, X Yang, T Yang - Journal of Alloys and Compounds, 2024 - Elsevier
We studied the crystal structure of self-catalyzed InAs nanowires with different diameters
grown on Si Substrate by metal-organic chemical vapor deposition (MOCVD) and found that …
grown on Si Substrate by metal-organic chemical vapor deposition (MOCVD) and found that …
The Short Channel and Quantum Confinement Effects on Transfer Characteristics of Si NWMOSFET Depending on the Gate Length and Temperature
İ Genç, S Ipek - Journal of the Institute of Science and Technology, 2022 - dergipark.org.tr
With advancements in nanomaterial synthesis, semiconductor device technology entered a
new era with nanotechnology. In fact, quantum effects such as confinement and tunneling …
new era with nanotechnology. In fact, quantum effects such as confinement and tunneling …
[PDF][PDF] InP/InAsP Quantum Discs-in-Nanowire Array Photodetectors: Design, Fabrication and Optical Performance
H Jeddi - 2024 - portal.research.lu.se
365523_1_OMSL_Hossein J.indd Page 1 InP/InAsP Quantum Discs-in-Nanowire Array
Photodetectors: Design, Fabrication and Optical Performance Jeddi, Hossein 2024 Document …
Photodetectors: Design, Fabrication and Optical Performance Jeddi, Hossein 2024 Document …