A comprehensive review of ion beam application in modern materials research is provided,
including the basics of ion beam physics and technology. The physics of ion-solid …

Local lifetime control by proton and alpha-particle irradiation with energies from 1.8 to 12.1
MeV and doses up to 5× 1012cm− 2 was faced with two types of electron irradiation giving …

A fast and soft reverse recovery diode with a Punch-Through (PT) NPN structure is proposed
and experimentally demonstrated. The structure features a P-type Schottky contact, a PT …

Local lifetime reduction by proton irradiation was used to optimize the static and dynamic
parameters of a 10 kV SiC pin diode. Carrier lifetime was reduced locally at the anode side …

Current–voltage under illumination and quantum yield characteristics of an amorphous
silicon/crystalline silicon hetero solar cell have been measured before and after exposure to …

The effect of local lifetime control by proton irradiation on the OCVD response of a 10 kV SiC
PiN diode was investigated. Carrier lifetime was reduced locally by irradiation with 800 keV …

A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET)
body-diode recovery speed is proposed. In this approach, a Schottky contact is integrated …

Characteristics of Si p+ n diodes with non-uniformly distributed compensating defects, which
were introduced by implantation with Xe23+ ions, have been studied. The layer with the …

Palladium (Pd) diffusion from a surface layer enhanced by defects from a helium (He)
irradiation is shown to provide a local lifetime control in a power pin diode annealed …

Pulse recovery time in semiconducting devices depends strongly on minority carrier lifetime,
bandgap-type-dependent recombination, impurity concentration, and subband placement. In …