Universal control of four singlet–triplet qubits

X Zhang, E Morozova, M Rimbach-Russ… - Nature …, 2024 - nature.com
The coherent control of interacting spins in semiconductor quantum dots is of strong interest
for quantum information processing and for studying quantum magnetism from the bottom …

Direct Microwave Spectroscopy of Andreev Bound States in Planar Josephson Junctions

M Hinderling, SC ten Kate, M Coraiola, DZ Haxell… - PRX Quantum, 2024 - APS
We demonstrate microwave measurements of the Andreev-bound-state (ABS) spectrum in
planar Josephson junctions (JJs) defined in Ge high-mobility two-dimensional hole gases …

Control of threshold voltages in / quantum devices via optical illumination

MA Wolfe, BX Coe, JS Edwards, TJ Kovach… - Physical Review …, 2024 - APS
Optical illumination of quantum dot qubit devices at cryogenic temperatures, while not well
studied, is often used to recover operating conditions after undesired shocking events or …

Recent progress in undoped group-IV heterostructures for quantum technologies

CT Tai, JY Li - Materials for Quantum Technology, 2024 - iopscience.iop.org
Silicon has been a core material for digital computing owing to its high mobility, stability
oxide interface, mature manufacturing technologies for more than half a century. While …

A backgate for enhanced tunability of holes in planar germanium

L Ruggiero, A Nigro, I Zardo, A Hofmann - Nano Letters, 2024 - ACS Publications
Planar semiconductor heterostructures offer versatile device designs and are promising
candidates for scalable quantum computing. Notably, heterostructures based on strained …

Mitigating variability in epitaxial-heterostructure-based spin-qubit devices by optimizing gate layout

B Martinez, S de Franceschi, YM Niquet - Physical Review Applied, 2024 - APS
The scalability of spin-qubit devices is conditioned by qubit-to-qubit variability. Disorder in
the host materials indeed affects the wave functions of the confined carriers, which leads to …

Geometry of the dephasing sweet spots of spin-orbit qubits

L Mauro, EA Rodríguez-Mena, M Bassi, V Schmitt… - Physical Review B, 2024 - APS
The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge
noise. However, there may exist “dephasing sweet spots” where the qubit decouples (to first …

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

CCD Frink, BD Woods, MP Losert… - arXiv preprint arXiv …, 2023 - arxiv.org
Nanofabricated metal gate electrodes are commonly used to confine and control electrons in
electrostatically defined quantum dots. However, these same gates impart a complicated …

Strain engineering in Ge/GeSi spin qubits heterostructures

L Mauro, EA Rodríguez-Mena, B Martinez… - arXiv preprint arXiv …, 2024 - arxiv.org
The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic
response with in-plane $ g $-factors $ g_ {x, y}^*\lesssim 0.3$ and out-of-plane $ g $-factor …

[HTML][HTML] Pit-formation in germanium homoepitaxial layers

M Oezkent, Y Liu, CH Lu, T Boeck, KP Gradwohl - Surface Science, 2024 - Elsevier
With increasing importance of germanium (Ge) for semiconductor quantum technologies, the
necessity of growing defect-free Ge films has become crucial. Here, Ge homoepitaxial …