Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
Overview of resistive random access memory (RRAM): Materials, filament mechanisms, performance optimization, and prospects
H Wang, X Yan - physica status solidi (RRL)–Rapid Research …, 2019 - Wiley Online Library
Because conventional nonvolatile memory is limited by process technology and physical
size, resistive random access memory (RRAM) gradually enters the field of view due to its …
size, resistive random access memory (RRAM) gradually enters the field of view due to its …
Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS2 Memristors
Abstract 2D memristors have demonstrated attractive resistive switching characteristics
recently but also suffer from the reliability issue, which limits practical applications. Previous …
recently but also suffer from the reliability issue, which limits practical applications. Previous …
Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109
Resistive random-access memory (ReRAM) devices based on halide perovskites have
recently emerged as a new class of data storage devices, where the switching materials …
recently emerged as a new class of data storage devices, where the switching materials …
Synthetic Powder-Based Thin (<0.1 μm) Cs3Bi2Br9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory
Here, we report on the resistive switching performance of a thin Cs3Bi2Br9 perovskite film
with a thickness of< 0.1 μm, enabled by synthesized Cs3Bi2Br9 powder. X-ray diffraction …
with a thickness of< 0.1 μm, enabled by synthesized Cs3Bi2Br9 powder. X-ray diffraction …
Controllable resistive switching of STO: Ag/SiO2-based memristor synapse for neuromorphic computing
Resistive random-access memory (RRAM) is a promising technology to develop nonvolatile
memory and artificial synaptic devices for brain-inspired neuromorphic computing. Here, we …
memory and artificial synaptic devices for brain-inspired neuromorphic computing. Here, we …
A review on device requirements of resistive random access memory (RRAM)-based neuromorphic computing
With the arrival of the era of big data, the conventional von Neumann architecture is now
insufficient owing to its high latency and energy consumption that originate from its …
insufficient owing to its high latency and energy consumption that originate from its …
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
In this work, electronic synaptic plasticity and analog bipolar switching behavior by using a
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Resistive random-access memory based on ratioed memristors
MA Lastras-Montano, KT Cheng - Nature Electronics, 2018 - nature.com
Resistive random-access memories made from memristor crossbar arrays could provide the
next generation of non-volatile memories. However, integrating large memristor crossbar …
next generation of non-volatile memories. However, integrating large memristor crossbar …
Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing
The modern-day computing technologies are continuously undergoing a rapid changing
landscape; thus, the demands of new memory types are growing that will be fast, energy …
landscape; thus, the demands of new memory types are growing that will be fast, energy …