Spin-dependent phenomena and device concepts explored in (Ga, Mn) As

T Jungwirth, J Wunderlich, V Novák, K Olejník… - Reviews of Modern …, 2014 - APS
Over the past two decades, the research of (Ga, Mn) As has led to a deeper understanding
of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries …

Weak localization of bulk channels in topological insulator thin films

HZ Lu, SQ Shen - Physical Review B—Condensed Matter and Materials …, 2011 - APS
Weak antilocalization (WAL) is expected whenever strong spin-orbit coupling or scattering
comes into play. Spin-orbit coupling in the bulk states of a topological insulator is very …

Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs

A Richardella, P Roushan, S Mack, B Zhou, DA Huse… - science, 2010 - science.org
Electronic states in disordered conductors on the verge of localization are predicted to
exhibit critical spatial characteristics indicative of the proximity to a metal-insulator phase …

A room-temperature magnetic semiconductor from a ferromagnetic metallic glass

W Liu, H Zhang, J Shi, Z Wang, C Song, X Wang… - Nature …, 2016 - nature.com
Emerging for future spintronic/electronic applications, magnetic semiconductors have
stimulated intense interest due to their promises for new functionalities and device concepts …

Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions

G Tkachov, EM Hankiewicz - Physical Review B—Condensed Matter and …, 2011 - APS
HgTe quantum wells and surfaces of three-dimensional topological insulators support Dirac
fermions with a single-valley band dispersion. In the presence of disorder they experience …

Mn-doped Ge and Si: a review of the experimental status

S Zhou, H Schmidt - Materials, 2010 - mdpi.com
Diluted ferromagnetic semiconductors (FMS) are in the focus of intense research due to their
potential applications in spintronics and their striking new physical properties. So far Mn …

Magnetotransport properties of the topological semimetal SrAgBi

MK Hooda, O Pavlosiuk, Z Hossain, D Kaczorowski - Physical Review B, 2022 - APS
Recently, the hexagonal compound SrAgBi has been theoretically predicted to host linearly
dispersing type-II and nonlinearly dispersing type-IV Dirac fermions near the Fermi level …

Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing

K Alberi, KM Yu, PR Stone, OD Dubon… - Physical Review B …, 2008 - APS
While the support for the existence of a Mn-derived impurity band in the diluted magnetic
semiconductor Ga 1− x Mn x As has recently increased, a detailed quantitative analysis of its …

Tunable positive magnetoresistance and crossover from weak antilocalization to weak localization transition in half-Heusler compounds RPtBi (R= lanthanide)

J Chen, H Li, B Ding, Z Hou, E Liu, X Xi, G Wu… - Applied Physics …, 2020 - pubs.aip.org
We report the observation of large tunable positive magnetoresistance (MR) effects in
magnetic lanthanide half-Heusler compounds RPtBi (R= Tb, Dy, Ho, Er, and Tm). The value …

Universal Conductance Fluctuations in a MnBi2Te4 Thin Film

MP Andersen, E Mikheev, IT Rosen, L Tai, P Zhang… - Nano …, 2023 - ACS Publications
Quantum coherence of electrons can produce striking behaviors in mesoscopic conductors.
Although magnetic order can also strongly affect transport, the combination of coherence …