Germicidal ultraviolet LEDs: A review of applications and semiconductor technologies
Ultraviolet light emitting diodes (UV LEDs) are one of the most promising technologies for
preventing future pandemics, improving health outcomes, and disinfecting water sources …
preventing future pandemics, improving health outcomes, and disinfecting water sources …
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
W Nunn, TK Truttmann, B Jalan - Journal of materials research, 2021 - Springer
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
The road ahead for ultrawide bandgap solar-blind UV photodetectors
A Kalra, UU Muazzam, R Muralidharan… - Journal of Applied …, 2022 - pubs.aip.org
This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …
Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode
The energy-efficient deep ultraviolet (DUV) optoelectronic devices suffer from critical issues
associated with the poor quality and large strain of nitride material system caused by the …
associated with the poor quality and large strain of nitride material system caused by the …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
[HTML][HTML] Prospectives for AlN electronics and optoelectronics and the important role of alternative synthesis
WA Doolittle, CM Matthews, H Ahmad, K Motoki… - Applied Physics …, 2023 - pubs.aip.org
Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging doping technologies enabled by low temperature, non-equilibrium …
facilitated by emerging doping technologies enabled by low temperature, non-equilibrium …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
[HTML][HTML] Realization of homojunction PN AlN diodes
Aluminum nitride (AlN) is an insulator that has shown little promise to be converted to a
semiconductor via impurity doping. Some of the historic challenges for successfully doping …
semiconductor via impurity doping. Some of the historic challenges for successfully doping …
Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures
Combination of sputter deposition and high-temperature annealing is a promising technique
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …
for preparing AlN templates with a low threading dislocation density (TDD) at a lower film …