The fundamentals and applications of ferroelectric HfO2
U Schroeder, MH Park, T Mikolajick… - Nature Reviews …, 2022 - nature.com
Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …
have attracted much interest from the ferroelectric materials and devices community …
A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology
In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …
high-performance computing and storage devices. As a result, continuous work on …
Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films
The crystal structure and ferroelectric properties of 12-to 18 nm-thick epitaxial YO1. 5-HfO2
films with 5–9% YO1. 5 on (111) ITO//(111) YSZ substrates are investigated to clarify the …
films with 5–9% YO1. 5 on (111) ITO//(111) YSZ substrates are investigated to clarify the …
A perspective on the physical scaling down of hafnia-based ferroelectrics
HfO 2-based ferroelectric thin films have attracted significant interest for semiconductor
device applications due to their compatibility with complementary metal oxide …
device applications due to their compatibility with complementary metal oxide …
Optimizing post-metal annealing temperature considering different resistive switching mechanisms in ferroelectric tunnel junction
We investigate the effect of post-metal annealing temperature () on ferroelectric (FE)
resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through …
resistive switching (RS) and non-FE RS in HfOx ferroelectric tunnel junctions. Through …
Sub 5 Å-EOT HfₓZr1–xO₂ for Next-Generation DRAM Capacitors Using Morphotropic Phase Boundary and High-Pressure (200 atm) Annealing With Rapid …
Achieving low equivalent oxide thickness (EOT) with CMOS-compatible materials is of prime
importance for further miniaturization of dynamic random access memory (DRAM) …
importance for further miniaturization of dynamic random access memory (DRAM) …
Kinetical phase transition paths and phase stability in ferroelectric HfO2
J Yang, J Liao, J Huang, F Yan, M Liao, Y Zhou - Scripta Materialia, 2024 - Elsevier
Novel ferroelectric HfO 2 films have obtained great attention owing to their super advantages
in electronic applications. However, the phase transition paths and ferroelectric phase …
in electronic applications. However, the phase transition paths and ferroelectric phase …
Power-delay area-efficient processing-in-memory based on nanocrystalline Hafnia ferroelectric field-effect transistors
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-
power and high-density nonvolatile memory devices in processing-in-memory (PIM) …
power and high-density nonvolatile memory devices in processing-in-memory (PIM) …
High performance, amorphous InGaZnO thin-film transistors with ferroelectric ZrO2 gate insulator by one step annealing
Ferroelectric thin film transistors (FE-TFTs) are of increasing interest for next generation
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …
memory applications. Post fabrication annealing plays a crucial role to induce ferroelectricity …
Hafnia-Based Ferroelectric Memory: Device Physics Strongly Correlated with Materials Chemistry
Hafnia-based ferroelectrics and their semiconductor applications are reviewed, focusing on
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …
next-generation dynamic random-access-memory (DRAM) and Flash. The challenges of …