This work reports the comprehensive study on asymmetric characteristic based on proposed
stackable vertical Channel-All-Around (CAA) In-Ga-Zn-O field-effect transistors (IGZO FETs) …

This work developed a compact model of the stackable vertical Channel-All-Around (CAA)
IGZO FETs, based on carrier trapping dynamics and (inner/outer) surface potential of a …

In contrast to lift-off and shadow mask processes, the back-channel wet etching (BCWE)
process is suitable for industrial-scale metallization processes for the large-area and mass …

Hafnium oxide gate dielectrics have elicited interest in dual gate ion-sensitive field-effect
transistors because of their high dielectric constant, high band gap, and a good interface …

This paper presents a novel mostly passive Δ-Σ ADC using amorphous Indium Gallium Zinc
Oxide (a-IGZO) thin-film transistors (TFTs). The ADC circuit consists of passive elements …

Active layer thickness variation in highly-doped amorphous indium-gallium-zinc oxide thin
film transistors with molybdenum-chromium contacts is studied to reveal parametric …

An island formation method for fabrication of a miniaturized CAAC‐OS FET has been
developed. With our etching process, the CAAC‐OS FET, which has a gate length as small …

In this study, the electrical characteristics and hot-carrier reliability are investigated in via-
contact type amorphous indium–gallium–zinc oxide thin-film transistors (TFTs) with different …

In this article, a partially isolated dual work function (PIDWF) gate In-Ga-Zn-O (IGZO) thin-film
transistor (TFT) is proposed to reduce the off-state current (Ioff) obviously, which also …

Negligible threshold-voltage shift is reported for oxide thin-film transistors (TFTs) under high
current (3 μA) and tensile bending stress (2 mm radius). The good stability is attributed to a …