Recent progress on negative capacitance tunnel FET for low-power applications: Device perspective
In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …
for an adequate device that can counteract the power dissipation issue due to the consistent …
Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices
R Khosla, SK Sharma - ACS applied electronic materials, 2021 - ACS Publications
Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …
Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering
In this paper, we achieved excellent variation control, endurance enhancement, and
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
Negative capacitance transistor to address the fundamental limitations in technology scaling: Processor performance
Negative capacitance field-effect transistor (NCFET) addresses one of the key fundamental
limits in technology scaling, akin to the non-scalable Boltzmann factor, by offering a sub …
limits in technology scaling, akin to the non-scalable Boltzmann factor, by offering a sub …
A perspective on steep-subthreshold-slope negative-capacitance field-effect transistor
M Kobayashi - Applied Physics Express, 2018 - iopscience.iop.org
In today's highly information-oriented society, a continuously increasing number of
computing devices are needed in the Internet-of-Things (IoT) era, from high-end servers in …
computing devices are needed in the Internet-of-Things (IoT) era, from high-end servers in …
On the characterization and separation of trapping and ferroelectric behavior in HfZrO FET
N-channel FETs with ferroelectric (FE) HfZrO gate oxide are fabricated, showing steep
subthreshold slope under certain conditions. Possible origins of I DV G hysteresis, the …
subthreshold slope under certain conditions. Possible origins of I DV G hysteresis, the …
Nvmexplorer: A framework for cross-stack comparisons of embedded non-volatile memories
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …
applications, and SRAM technology scaling and leakage power limits the efficiency of …
Beyond Moore's law–A critical review of advancements in negative capacitance field effect transistors: A revolution in next-generation electronics
Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …
Enhanced Reliability, Switching Speed and Uniformity for Ferroelectric HfZrOx on Epitaxial Ge Film by Post Deposition Annealing for Oxygen Vacancy Control
Instead of employing post metal annealing (PMA), post deposition annealing (PDA) was
proposed to crystalize HfZrO x (HZO) into the ferroelectric phase on an epitaxial Ge film with …
proposed to crystalize HfZrO x (HZO) into the ferroelectric phase on an epitaxial Ge film with …