Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
Dipole formation to modulate flatband voltage using ALD Al2O3 and La2O3 at the interface between HfO2 and Si or Ge substrates
Y Zhang, M Choi, Z Wang, C Choi - Applied Surface Science, 2023 - Elsevier
In this study, we have studied the flatband voltage (V FB) modulation by the formation of Al
and La-induced dipoles at the interface between Si or Ge substrates and HfO 2 gate …
and La-induced dipoles at the interface between Si or Ge substrates and HfO 2 gate …
Fluorinated Graphene in Interface Engineering of Ge‐Based Nanoelectronics
Germanium is a promising candidate to replace silicon in nanoelectronics due to its
significantly higher electron and hole mobilities. However, the unstable germanium oxide …
significantly higher electron and hole mobilities. However, the unstable germanium oxide …
Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks
Electrical data on ZrO 2/GeO 2 stacks prepared by atomic oxygen beam deposition on Ge at
225 C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the …
225 C reveal a relatively weak dependence of the stack equivalent oxide thickness upon the …
Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate
The interfacial characteristics and band alignments of high-k Zr O 2 on p-Ga As have been
investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has …
investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has …
Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness
S Abermann, O Bethge, C Henkel… - Applied Physics …, 2009 - pubs.aip.org
We investigate ultrathin ZrO 2/La 2 O 3 high-k dielectric stacks on germanium grown by
atomic layer deposition. La 2 O 3 is deposited from tris ( N, N′-diisopropylformamidinate) …
atomic layer deposition. La 2 O 3 is deposited from tris ( N, N′-diisopropylformamidinate) …
Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge (100)
La-doped ZrO 2 thin films grown by O 3-based atomic layer deposition directly on Ge (100)
exhibit a dielectric constant of 29. Upon annealing in N 2 at 400 C, a high κ value> 40 is …
exhibit a dielectric constant of 29. Upon annealing in N 2 at 400 C, a high κ value> 40 is …
Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness
The nearly free interfacial layer and the tetragonal phase ZrO 2 with the high permittivity of
45±3 on Ge (001) substrate lead to the equivalent oxide thickness as low as 0.39 nm and …
45±3 on Ge (001) substrate lead to the equivalent oxide thickness as low as 0.39 nm and …
Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films
F Ze-Bo, Z Yan-Yan, W Jia-Le, J Zui-Min - Chinese Physics B, 2009 - iopscience.iop.org
Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive
evaporation. This paper reports the evolution of the structure, morphology and electrical …
evaporation. This paper reports the evolution of the structure, morphology and electrical …