Metalorganic compounds are finding an increasing application in the growth of III–V and II–
VI semiconductor layers by metalorganic vapour phase epitaxy (MOVPE) and chemical …

The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …

Metal‐organic chemical vapor deposition (MOCVD) is a suitable technique for the
preparation of III–V epitaxial layers which are used in the fabrication of microelectronic and …

We present in-situ mass spectroscopy studies of surface reactions of dimethylaminoarsine
and tertiarybutylarsine under metalorganic molecular beam epitaxy conditions. The results …

Thermally cracked tertiarybutylarsine and tertiarybutylphosphine were used to replace AsH3
and PH3 for the growth of Ga0. 47In0. 53As and InP by metalorganic molecular beam …

The prevention of disastrous leakage of AsH3 is a requirement for metalorganic vapor phase
epitaxy systems. Less hazardous organoarsine has been investigated as an alternative to …

Epitaxial layers of nominally undoped GaAs have been grown by metalorganic chemical
vapor deposition using liquid tertiarybutylarsine and triethylgallium. n-type layers were …

Heavy Si doping was studied for low‐pressure metalorganic chemical vapor deposition of
GaAs by using tertiarybutylarsine (t BAs) as a group‐V source and silane (SiH4) as a doping …

The chemical vapor deposition (CVD) techniques used to grow III/V semiconductors films,
such as metalorganic vapor phase epitaxy (MOVPE), hydride VPE, chemical beam epitaxy …

The alternative group V sources trisdimethylamino-arsine (TDMAAs) and trisdimethylamino-
phosphine (TDMAP) have been used as substitutes for the highly toxic group V hydrides …