Novel method of boron diffusion at low temperatures between 1150 and 1300° C is used for
the formation of both p‐i SiC junction and i‐region in one technological process. As the …

Improved complementary doping methods are described herein. The complementary doping
methods generally involve inducing a first and second chemical reaction in at least a first …

Pin 4H‐SiC〈 Al〉 diode structures are fabricated by a new approach which is low
temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into …

Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon
vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in …

BACKGROUND 0002 Chip packages, eg TO220-3, eg TO224-3, usually include one or
more active components arranged within dis crete housings. Normal chip embedding …

The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified
model of such diffusion is presented. The method of UV stimulated etching by aqueous …

Optical absorption of pn-4H‐SiC structures doped with boron and aluminum by low‐
temperature diffusion was studied for the first time. Diffusion of impurities was performed …

A study has been made of the activation energy of the conductance of a pn-4H-SiC< Al>
structure created through the doping of silicon carbide with aluminum. The doping was …

In this paper, the electrophysical characteristics of the 4H-SiC pn junction created by low-
temperature diffusion of aluminum were studied. Current-voltage (IV) characteristics are …

Аннотация Исследовано влияние ионизованных примесей и микротрубок на
напряжение обратного пробоя pn-перехода на основе 4Н-SiC, полученного методом …