The influence of a thermal boundary resistance (TBR) on temperature distribution in ungated
AlGaN/GaN field-effect devices was investigated using 3-D micro-Raman thermography …

Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors
fabricated using a substrate replacement process in which a thick diamond substrate is …

Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer
on AlGaN/GaN HEMT devices. Compared to a control sample, the NCD-capped HEMTs …

AlGaN/GaN high electron mobility transistor (HEMT) device operation was modeled from the
sub-micrometer scale to the substrate using a combination of an electro-thermal device …

We report results of the analytical and numerical investigation of self-heating effects in GaN-
based high-power field-effect transistors. The problem of heat transfer in a transistor …

This paper presents an accurate quasi-physical compact large-signal model for GaN high
electron mobility transistors (HEMTs). The drain current I ds expression is acquired by …

Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-
power operation but suffer in reliability due to potentially damaging self-heating. In this …

A thermal model based on the polynomial relationship of ns and EF is presented. The effect
of temperature rise due to self-heating is studied on various parameters viz. polarization …

Abstract Reduced performance in Gallium Nitride (GaN)-based high electron mobility
transistors (HEMTs) as a result of self-heating has been well-documented. To mitigate this …

An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron
transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) …