A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers over a substrate. A material layer stack containing, from outside to …

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A first die includes a three-dimensional memory device and first copper pads. A second die
includes a peripheral logic circuitry containing CMOS devices located on the semiconductor …

Monolithic, three dimensional NAND strings include a semiconductor channel, at least one
end portion of the semiconductor channel extending substantially perpendicular to a major …

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TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

A method of making a monolithic three dimensional NAND string. The method includes
forming a stack of alternating layers of a first material and a second material over a …

A memory film layer is formed in a memory opening through an alternating stack of first
material layers and second material layers. A sacrificial material layer is deposited on the …

(57) ABSTRACT A monolithic, three dimensional NAND string includes a first memory cell
located over a second memory cell, a select transistor, a first word line of the first memory …

A NAND device has at least a 3× 3 array of vertical NAND strings in which the control gate
electrodes are continuous in the array and do not have an air gap or a dielectric filled trench …