40 years of research on low-frequency (LF) noise and random-telegraph noise (RTN) in
metallic and semiconducting nanowires (NWs) demonstrate the importance of defects and …

By the continuing downscaling of sub-micron transistors in the range of few to sub-
decananometers, we focus on the increasing relative level of the low-frequency noise in …

In this paper, we report about the derivation of a physics-based compact model of random
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …

Following their first observation in 1984, random telegraph signals (RTSs) were initially a
purely scientific tool to study fundamental aspects of defects in semiconductor devices. As …

Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor
(MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This …

The stochastic resonance (SR) of two coupled fractional harmonic oscillators with a
dichotomous fluctuating mass is investigated. The complete synchronization between the …

The long-time collective behavior of globally coupled Langevin equations in a dichotomous
fluctuating potential driven by a periodic source is investigated. By describing the collective …

We study stochastic resonance (SR) in a fractional harmonic oscillator with time delay and
mass fluctuation. Using a moment equation, we derive the exact analytical expression of the …

Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique
properties which may completely differ from their bulk counterparts. The main aim of this …

Random telegraph noise (RTN) is one of the most challenging defect-related reliability
concerns in emerging HfO2-based devices due to the higher bulk defect density compared …