In this work, the effect of size and wetting layer on subband electronic envelop functions,
eigenenergies, linear and nonlinear absorption coefficients and refractive indices of a dome …

GaAs-based InGaAsN quantum well films grown by molecular beam epitaxy are
characterized by photoluminescence spectroscopy. InGaAsN with high N concentrations of …

We present the first continuous-wave (CW) edge-emitting lasers at 1.5/spl mu/m grown on
GaAs by molecular beam epitaxy (MBE). These single quantum well (QW) devices show …

Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become
excellent candidates for a variety of lower cost 1.2–1.6 μm lasers, optical amplifiers and high …

The first low-threshold 1.55 μm lasers grown on GaAs are reported. Lasing at 1.55 μm was
observed from a 20 Â 2400 μm as-cleaved device with a room-temperature continuous …

We present temperature-dependent measurements of the local Z parameter, which reflects
the dominant recombination processes. At room temperature, Z increases with current from …

We analyze the temperature sensitivity of 1.5-/spl mu/m GaInNAsSb lasers grown on GaAs.
Building on the method of Tansu and coworkers, we find evidence that the characteristic …

This Memorandum for the Chairman of the Joint Chiefs of Staff is open analysis of the major
outcomes and implications emerging from the United States Army War College s 25th …

Conclusion: We have shown that GaInNAs (Sb) can be extended beyond 1.45 μm by
optimising the nitrogen plasma to minimise ion damage during growth. VCSELs lased at a …

Dilute nitride Ga (In) NAs/GaAsSb ldquoWrdquo type II quantum wells on GaAs substrates
have been grown by metal-organic chemical vapor deposition (MOCVD). Design studies …