[HTML][HTML] Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors
(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …
Advances in GeSn alloys for MIR applications
Silicon photonics is widely used for near InfraRed (IR) applications up to 1.6 µm. It plays a
key role in short-range optical data communications. However, silicon photonics does not …
key role in short-range optical data communications. However, silicon photonics does not …
All‐Group IV Transferable Membrane Mid‐Infrared Photodetectors
Semiconductor membranes emerged as a versatile class of nanomaterials to control lattice
strain and engineer complex heterostructures enabling a variety of innovative applications …
strain and engineer complex heterostructures enabling a variety of innovative applications …
[HTML][HTML] Review of Ge (GeSn) and InGaAs avalanche diodes operating in the SWIR spectral region
Y Miao, H Lin, B Li, T Dong, C He, J Du, X Zhao, Z Zhou… - Nanomaterials, 2023 - mdpi.com
Among photodetectors, avalanche photodiodes (APDs) have an important place due to their
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …
excellent sensitivity to light. APDs transform photons into electrons and then multiply the …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Continuous-wave GeSn light-emitting diodes on silicon with 2.5 μm room-temperature emission
Silicon-compatible short-and midwave infrared emitters are highly sought after for on-chip
monolithic integration of electronic and photonic circuits to serve a myriad of applications in …
monolithic integration of electronic and photonic circuits to serve a myriad of applications in …
Short-range order in GeSn alloy
Group IV alloys have been long viewed as homogeneous random solid solutions since
perceiving them as Si-compatible, direct-band gap semiconductors 30 years ago. Such a …
perceiving them as Si-compatible, direct-band gap semiconductors 30 years ago. Such a …
Band structure of Ge1− xSnx alloy: A full-zone 30-band k· p model
A full-zone 30-band k· p model is developed as an efficient and reliable tool to compute
electronic band structure in Ge 1− x Sn x alloy. The model was first used to reproduce the …
electronic band structure in Ge 1− x Sn x alloy. The model was first used to reproduce the …
[HTML][HTML] Ge1−xSnx alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentration
In this work we study the nature of the band gap in GeSn alloys for use in silicon-based
lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from …
lasers. Special attention is paid to Sn-induced band mixing effects. We demonstrate from …