The transistor offset from sense amplifiers affects the sensing performance in dynamic
random-access memory (DRAM). Although various offset-compensation methods are …

Sense amplifiers (SA) play a vital role in supporting the read performance of static random-
access memory (SRAM). Single ended SRAM has attracted importance due to low leakage …

The input-referred offset voltage () of the sense amplifier (SA) often dictates the minimum
required differential voltage swing on bit-lines and is an important indicator that determines …

This article proposes a new mathematical model that accurately predicts statistical margin
characteristics of bit-line sense amplifiers (BLSAs) with offset calibration (OC) and pre …

As the physical size of dynamic random-access memory (DRAM) technology continues to
decrease, the effects of process fluctuations on the transistor-threshold voltage are …

This paper introduces an on-chip analog calibration method tailored for differential
temperature sensors in thermal monitoring applications. A three-step calibration process is …

In an SRAM, threshold voltages of transistors decrease as the CMOS process technology
scales down into the nanometer scale, which causes the leakage currents on the bit‐lines …

This reference text covers a wide spectrum for designing robust embedded memory and
peripheral circuitry. It will serve as a useful text for senior undergraduate and graduate …

Sense amplifiers plays important role in CMOS memories. It is one of the most vital
component of a semiconductor memory chip. While reading the data stored in SRAM cell …