The high quality and efficient production of third-generation semiconductor materials has
recently been a hot research topic. At the same time, the substrate material properties could …

Chemical vapor deposition (CVD) is an established process for the production of thin solid
films for industrial and scientific applications for more than 30 years. CVD is a multiscale …

The development of a three-dimensional, multiscale computational fluid dynamics (CFD)
model is presented here which aims to capture the deposition of amorphous silicon thin films …

Molecular dynamics is an atomistic tool that is able to treat dynamics of atom/molecules/
cluster assemblies mainly in the condensed and liquid phases. The goal of the present …

Graphite plate was used as a substrate material for growing semiconductor films in the
MOCVD process. The graphite plate was protected in the MOCVD process by the SiC …

This work focuses on the development of a multiscale computational fluid dynamics (CFD)
simulation framework with application to plasma-enhanced chemical vapor deposition of …

This chapter introduces the complex relationships existing among the process conditions,
the microstructure and the functional properties for metal oxide films processed by …

A new experimental method to measure the diffusivity of reactive metal organics in high-
temperature (> 150° C) supercritical carbon dioxide (scCO 2) is reported. The technique …

Today, plasma-enhanced chemical vapor deposition (PECVD) remains the dominant
processing method for the manufacture of silicon thin films due to inexpensive production …

Chemical Vapor Deposition CVD is a widely used process for producing thin solid films and,
nanoscale structures from gaseous reactants. Its applications range from coatings for wear …