The paper reviews our recent progress and current challenges in implementing advanced
gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS …

In this paper, the electrical performance of high-k dielectrics for future technology
generations is discussed. Despite major achievements in the development of high-k …

A complete determination of the effective work functions (WF) of NiSi, Ni/sub 2/Si, Ni/sub
31/Si/sub 12/and Ni/sub 3/Si on HfSiON and on SiO/sub 2/is presented. Conditions for …

The key result in this work is that FUSI/HfSi/sub x/O/sub y/gate stacks offer both significant
gate leakage reduction (due to high-/spl kappa/) and drive current improvement at T/sub …

We demonstrate for the first time CMOS integration of dual WF (work function) metal gates
on HfSiON using Ni-phase controlled FUSI. The novel integration scheme that we …

When comparing the extracted carrier mobility of long-and short-channel transistors, special
consideration must be given to the metallurgical gate length (L_\rmmet), neglecting the …

Issues surrounding the integration of Hf-based high-/spl kappa/dielectrics with metal gates in
a conventional CMOS flow are discussed. The careful choice of a gate-stack process as well …

We demonstrate for the first time the scalability of NiSi and Ni/sub 3/Si FUSI gate processes
down to 30 nm gate lengths, with linewidth independent phase and V/sub t/control. We show …

The authors propose a practical half-masked Damascene-like full silicidation (HAMDAMA)
process to fabricate dual gate HfSiON CMOSFET in which poly-Si and fully silicided (FUSI) …

The CMOS integration of dual work function (WF) phase-controlled Ni fully silicided (FUSI)
gates on HfSiON was investigated. For the first time, the integration of NiSi FUSI gates on n …