Exploration of microstructural, chemical states and electrical features of the Au/Er2O3/n-GaN MIS diode with a Er2O3 interlayer

DS Reddy, VR Reddy, CJ Choi - Materials Science and Engineering: B, 2023 - Elsevier
The study involved the formation of high-k erbium oxide (Er 2 O 3) films on the n-GaN
surface and evaluated their microstructural and chemical states by XRD, TEM and XPS …

Interface Engineering of CZTS/TiO2 Heterojunction Using Wide‐Bandgap Ga2O3 Passivation Interlayer for Efficient Charge Extraction

Nisika, A Ghosh, D Kaur, K Kaur… - … status solidi (a), 2022 - Wiley Online Library
The greatest challenge for further improving the efficiency of Cu2ZnSnS4 (CZTS) solar cells
is the high open‐circuit voltage (VOC) loss owing to nonradiation interface recombination …

Effect of annealing temperature on the electrical characteristics of Al/Er2O3/n-Si/Al MOS capacitors

A Mutale, SC Deevi, E Yilmaz - Journal of Alloys and Compounds, 2021 - Elsevier
In this work, Er 2 O 3 films deposited by electron beam (E-beam) evaporation technique
were annealed at 450° C, 550° C, and 650° C in N 2 atmosphere for 30 min. We then …

Analysis of the chemical states and microstructural, electrical, and carrier transport properties of the Ni/HfO2/Ga2O3/n-GaN MOS junction

V Manjunath, U Chalapathi, BP Reddy, CH Ahn… - Journal of Materials …, 2023 - Springer
This paper investigates the effect of gallium oxide (Ga2O3) and hafnium dioxide (HfO2) thin
films as interlayers between the Ni and n-GaN semiconductor on the electrical …

Analysis of voltage and frequency-dependent series resistance and interface states of Al/ZnCo2O4: Gelatin/n-Si diode

S Cavdar, Y Demirolmez, N Turan, H Koralay… - Journal of Materials …, 2022 - Springer
In this work, which aims to investigate the capacitance and conductance properties of
ZnCo2O4-doped Gelatin, 5% ZnCo2O4-doped Gelatin film was grown on n-type silicon …

The study of interface quality in HfO2/Si films probed by second harmonic generation

L Ye, L Zhang, S Wang, W Zhao, C Huang… - Journal of Physics D …, 2024 - iopscience.iop.org
Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-
contact method to qualitatively/quantitively characterize the semiconductor materials, which …

Improvement of capacitive and resistive memory in WO3 thin film with annealing

R Rajkumari, MW Alam, B Souayeh… - Journal of Materials …, 2024 - Springer
In this study, electron beam evaporated tungsten oxide (WO3) thin film (TF) has been
investigated for both capacitive and resistive switching memory devices. The fabricated …

The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure

A Mutale, MC Zulu, E Yilmaz - Journal of Materials Science: Materials in …, 2023 - Springer
In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping
memory device by RF magnetron sputtering technique. The structural and electrical …

Yb/MoO3/In2Se3/Ag Sensors Designed as Tunneling Diodes, MOSFETs, Microwave Resonators, Laser Sensors, and VLC Receivers Suitable for 4G/5G and VLC …

AF Qasrawi, NMA Yaseen - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
Herein, stacked layers of Yb/MoO 3/In 2 Se 3/Ag (MI) heterojunctions are employed as
multifunctional sensors. The theoretical design of the energy band diagrams of the MI …

[HTML][HTML] Comprehensive study of interface state via the time-dependent second harmonic generation

L Zhang, L Ye, W Zhao, C Huang, T Li, T Min… - Journal of Applied …, 2024 - pubs.aip.org
Electric field induced time-dependent second harmonic generation (TD-SHG) is an
emerging sensitive and non-contact method for qualitatively/quantitatively probing …