After two decades of intensive development, 3-D integration has proven invaluable for
allowing integrated circuits to adhere to Moore's Law without needing to continuously shrink …

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …

As a powerful enabling technology, three-dimensional (3D) integration, which uses wafer
bonding to integrate multiple wafers in the vertical direction and uses through‑silicon-vias …

Keep-out-zone (KOZ) is a conservative way to prevent any devices/cells from being
impacted by the through-silicon via (TSV)-induced stress. In this paper, an effective …

A wideband equivalent-circuit model of coaxialannular through-silicon vias (TSVs) for three-
dimensional (3-D) integrated circuits is proposed in this paper. Rigorous closed-form …

A novel π-type equivalent-circuit model of through-silicon vias (TSVs) for 3-D integrated
circuits (3-D'Cs) considering eddy current and proximity effects is proposed in this paper …

In this letter, Ground-Signal-Ground type through-silicon vias (TSVs) are designed to
achieve millimeter wave applications in three-dimensional integrated circuits (3-D ICs). Air …

In this letter, the Resistance Inductance Capacitance Conductance (RLCG) parameters of
carbon nanotube through silicon via (CNT-TSV) are modeled and a transmission line (TL) …

We investigated the transmission characteristics of Cu/CNT composite Through‐silicon via
(TSV) interconnects. The equivalent lumped‐element circuit model was established, with the …

Since the coupling loss of conventional low resistivity silicon (LRSi) is considerable in high
speed three-dimensional integrated circuits (3-D ICs), air-cavity through-silicon vias (TSVs) …