Many routes to ferroelectric HfO2: A review of current deposition methods
Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …
researchers are still intensely fascinated by this material system and the promise it holds for …
[HTML][HTML] HfO2-based ferroelectric thin film and memory device applications in the post-Moore era: A review
J Liao, S Dai, RC Peng, J Yang, B Zeng, M Liao… - Fundamental …, 2023 - Elsevier
The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …
required for novel non-volatile memory devices with low power consumption, fast read/write …
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors
The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
(o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by …
Low-toxicity chemical solution deposition of ferroelectric Ca: HfO 2
So far, a few chemical solution routes for the fabrication of ferroelectric HfO2 films have been
reported. Most of them employ precursors, solvents or additives that are considered difficult …
reported. Most of them employ precursors, solvents or additives that are considered difficult …
Control of Ferroelectricity in Solution‐Processed Hafnia Films Through Annealing Atmosphere
Abstract Chemical Solution Deposition enables low‐cost fabrication of ferroelectric HfO2
films suitable for piezoelectric applications. Control of processing parameters is of utmost …
films suitable for piezoelectric applications. Control of processing parameters is of utmost …
Effects of annealing conditions on structural and ferroelectric properties of CeO2-HfO2 solid solution thin films on InAs substrates fabricated by chemical solution …
S Zheng, C Jing, Z Liu, P Hao, Q Yang, B Zeng… - Journal of Alloys and …, 2023 - Elsevier
CeO 2-HfO 2 solid solution thin films are fabricated on (100) InAs substrates by chemical
solution deposition (CSD) method. The effects of annealing conditions (annealing …
solution deposition (CSD) method. The effects of annealing conditions (annealing …
Growth of the orthorhombic phase and inhibition of charge injection in ferroelectric HfO2-based MFIS memory devices with a high-permittivity dielectric seed layer
Y Zhang, D Wang, J Wang, C Luo, M Li, Y Li… - Science China …, 2023 - Springer
The poor endurance of the ferroelectric (FE) HfO2 (Fe-HfO2) material-based FE field-effect
transistor (Fe-FET) remains a major challenge for its future commercial production. Here we …
transistor (Fe-FET) remains a major challenge for its future commercial production. Here we …
In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0. 5Zr0. 5O2 thin films
The discovery of ferroelectricity in HfO 2 ultrathin films has gathered considerable interest
from the microelectronic industry owing to their compatibility with complementary metal …
from the microelectronic industry owing to their compatibility with complementary metal …
[HTML][HTML] Harnessing the power of temperature gradient-enhanced pyroelectricity: Self-powered temperature/light detection in Ce-doped HfO2 ferroelectric films with …
J Peng, J Jiang, S Yuan, P Hou, J Wang - Journal of Materiomics, 2025 - Elsevier
Ferroelectric materials are ideal for self-powered sensors in Internet of Things (IoT) and high-
precision detection systems due to their excellent polarization properties. Compatibility with …
precision detection systems due to their excellent polarization properties. Compatibility with …
Role of Nitrogen in Ferroelectricity of HfxZr1-xO2-Based Capacitors With Metal-Ferroelectric-Insulator-Metal Structure
DR Hsieh, CC Lee, TS Chao - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
In this study, Hf x Zr 1-x O 2 (HZO)-based capacitors with a metal–ferroelectric–insulator–
metal (MFIM) structure were fabricated without and with ammonia (NH 3) plasma nitridation …
metal (MFIM) structure were fabricated without and with ammonia (NH 3) plasma nitridation …