A survey on switching oscillations in power converters

T Liu, TTY Wong, ZJ Shen - … of Emerging and Selected Topics in …, 2019 - ieeexplore.ieee.org
High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

Experimental and modeling comparison of different damping techniques to suppress switching oscillations of SiC MOSFETs

T Liu, Y Zhou, Y Feng, TTY Wong… - 2018 IEEE Energy …, 2018 - ieeexplore.ieee.org
The switching oscillations associated with the ultrafast switching characteristics of silicon
carbide (SiC) MOSFETs seriously limit the potential of high frequency and high power …

Parasitic inductances extraction for SiC power modules using an enhanced two-port S-parameter approach

Z Wang, Z Yuan, Y Zhao - 2021 IEEE Applied Power …, 2021 - ieeexplore.ieee.org
Parasitic inductance of power modules is one nonnegligible part of inductance on
converters' current commutation loop (CCL). Larger CCL inductance leads to higher …

A Drain Current Extraction Technique Using Source Parasitic Resistance and Inductance in SiC Power MOSFETs

T Liu, Y Quan, X Zhou, Y Tian, J Feng… - … on Power Electronics, 2023 - ieeexplore.ieee.org
In order to monitor the operating status of silicon carbide power mosfet s, an in-circuit real-
time drain current extraction technique based on packaging parasitic parameters is …

Characterization and Modeling of SiC Multi-Chip Power Modules

BT DeBoi - 2022 - search.proquest.com
The accelerating commercialization of wide bandgap technology has led to increased
demand for accurate circuit-level simulation models of devices such as Silicon-Carbide …

[图书][B] Electronically Assisted Direct Current Circuit Breakers

Y Feng - 2019 - search.proquest.com
DC power is gaining tractions recently, however, DC fault protection remains a major
technical challenge. Popular and cost-effective AC mechanical circuit breakers do not offer …