Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …
decades. Notable progress has recently been made in this research area, fueled by …
[HTML][HTML] Recent trends in 8–14 μm type-II superlattice infrared detectors
Abstract Type-II superlattices (T2SLs) hold enormous potential for next-generation 8–14 μm
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
long-wavelength infrared (LWIR) detectors for use at high operating temperature (HOT). The …
[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
Vertical III–V nanowire device integration on Si (100)
We report complementary metal–oxide–semiconductor (CMOS)-compatible integration of
compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively …
compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively …
Lanthanides in solar energy conversion
JCG Bünzli, AS Chauvin - Handbook on the Physics and Chemistry of Rare …, 2014 - Elsevier
Solar energy represents an abundant (1000 W m− 2) and seemingly cheap source of
energy. One way to tap it is to transform light into electricity with photovoltaic devices. Single …
energy. One way to tap it is to transform light into electricity with photovoltaic devices. Single …
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
PE Hopkins, JC Duda, SP Clark, CP Hains… - Applied Physics …, 2011 - pubs.aip.org
We report on the thermal boundary conductance across structurally-variant GaSb/GaAs
interfaces characterized by different dislocations densities, as well as variably-rough …
interfaces characterized by different dislocations densities, as well as variably-rough …
Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111) A Substrates by Molecular Beam Epitaxy
Tin telluride (SnTe) is an IV–VI semiconductor with a topological crystalline insulator band
structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many …
structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many …
Blocking phonons via nanoscale geometrical design
By introducing a serpentine structure in a straight silicon nanowire, we have experimentally
achieved a significant reduction in its phonon thermal conductance at low temperature (T< 5 …
achieved a significant reduction in its phonon thermal conductance at low temperature (T< 5 …
Tuning the ground state of LaCaMnO films via coherent growth on orthorhombic NdGaO substrates with different orientations
The commensurate La 0.67 Ca 0.33 MnO 3 films, of which the bulk is a ferromagnetic-metal
(FM), can show strikingly different ground states when grown on NdGaO 3 substrates of …
(FM), can show strikingly different ground states when grown on NdGaO 3 substrates of …
Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires
T Böhnert, AC Niemann, AK Michel, S Bäßler, J Gooth… - Physical Review B, 2014 - APS
The magnetothermopower and the magnetoresistance of single Co-Ni/Cu multilayered
nanowires with various thicknesses of the Cu spacer are investigated. Both kinds of …
nanowires with various thicknesses of the Cu spacer are investigated. Both kinds of …