Perspectives on atomic-scale switches for high-frequency applications based on nanomaterials
Nanomaterials science is becoming the foundation stone of high-frequency applications.
The downscaling of electronic devices and components allows shrinking chip's dimensions …
The downscaling of electronic devices and components allows shrinking chip's dimensions …
[HTML][HTML] Asymmetric dual-grating gates graphene FET for detection of terahertz radiations
JA Delgado-Notario, V Clericò, E Diez… - APL Photonics, 2020 - pubs.aip.org
A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated
and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and …
and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and …
Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature
The microwave detection capability of GaN-based asymmetric planar nanodiodes (so-called
Self-Switching Diode, SSD, due to its non-linearity) has been characterized in a wide …
Self-Switching Diode, SSD, due to its non-linearity) has been characterized in a wide …
Terahertz electronic devices
The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
Temperature and gate-length dependence of subthreshold RF detection in GaN HEMTs
G Paz-Martínez, I Íñiguez-De-La-Torre… - Sensors, 2022 - mdpi.com
The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating
as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending …
as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending …
Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two
configuration schemes: voltage and current responsivity. The ratio between both figures of …
configuration schemes: voltage and current responsivity. The ratio between both figures of …
Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence
E Pérez-Martín, I Íñiguez-De-La-Torre… - Journal of Applied …, 2021 - pubs.aip.org
In this paper, the occupancy of sidewall surface states having a clear signature in the
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …
Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
The zero-bias microwave detection capability of self-switching diodes (SSDs) based on
AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured …
AlGaN/GaN is analyzed in a wide temperature range, from 10 K to 300 K. The measured …
Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion
E Pérez-Martín, T González… - Journal of Applied …, 2024 - pubs.aip.org
The small-signal equivalent circuit of GaN-based self-switching diodes has been obtained,
which apart from the intrinsic RkC branch, generally used to describe the diode …
which apart from the intrinsic RkC branch, generally used to describe the diode …
Effect of side gates doping on graphene self-switching nano-diode rectification
Based on the self-consistent charge density functional tight-binding method, the electrical
properties and rectification behavior of graphene self-switching nanodiodes with B and N …
properties and rectification behavior of graphene self-switching nanodiodes with B and N …