Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Memristive devices for computing
Memristive devices are electrical resistance switches that can retain a state of internal
resistance based on the history of applied voltage and current. These devices can store and …
resistance based on the history of applied voltage and current. These devices can store and …
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …
Emerging memories: resistive switching mechanisms and current status
The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …
attention for its application in non-volatile memory (NVM) devices, popularly described as …
Redox-Based Resistive Switching Memories-Nanoionic Mechanisms, Prospects, and Challenges.
R Waser, R Dittmann, G Staikov… - … Materials (Deerfield Beach …, 2009 - europepmc.org
This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …
nanoelectronic nonvolatile memories. The three main classes are based on an …
Schottky barrier control of self-polarization for a colossal ferroelectric resistive switching
B Huang, X Zhao, X Li, L Li, Z Xie, D Wang, D Feng… - ACS …, 2023 - ACS Publications
Controlling the domain evolution is critical both for optimizing ferroelectric properties and for
designing functional electronic devices. Here we report an approach of using the Schottky …
designing functional electronic devices. Here we report an approach of using the Schottky …
Nanoscale resistive memory with intrinsic diode characteristics and long endurance
We report studies on nanoscale resistive memory devices that exhibit diodelike IV
characteristics at on-state with reverse bias current suppressed to below 10− 13 A and …
characteristics at on-state with reverse bias current suppressed to below 10− 13 A and …
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
CY Huang, CY Huang, TL Tsai, CA Lin… - Applied physics …, 2014 - pubs.aip.org
In this Letter, the mechanism of double forming process phenomenon revealing in ZrO 2/HfO
2 bilayer resistive random access memory structure is investigated. This phenomenon …
2 bilayer resistive random access memory structure is investigated. This phenomenon …
Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr0.2Ti0.8)O3 Films
Spontaneous polarization of ferroelectric materials has been for a long time proposed as
binary information support, but it suffers so far from destructive readout. A nondestructive …
binary information support, but it suffers so far from destructive readout. A nondestructive …