(57) ABSTRACT A nitride semiconductor laser device has an improved stabil ity of the lateral
mode under high output power and a longer lifetime, so that the device can be applied to …

3,439,189 A 4/1969 Petry 3,629,011 A 12/1971 Tohiet a1. 3,924,024 A 12/1975 Naber et a1.
4,160,920 A 7/1979 Courier de Mere 4,242,690 A 12/1980 Temple source/drain regions that …

107 electrode electrically coupled with the source region and the base region, a drain
electrode located on a second Surface of the substrate, and a deep layer. The deep layer is …

High power transistors are provided. The transistors include a source region, a drain region
and a gate contact. The gate contact is positioned between the source region and the drain …

US6711191B1 - Nitride semiconductor laser device - Google Patents US6711191B1 -
Nitride semiconductor laser device - Google Patents Nitride semiconductor laser device …

US7476594B2 - Methods of fabricating silicon nitride regions in silicon carbide and resulting
structures - Google Patents US7476594B2 - Methods of fabricating silicon nitride regions in …

Int. Cl. The present disclosure relates to a power module that has a HOIL 29/6(2006.01)
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …

MESFETs with a two recess gate structure. MESFETS with 3.903. 592 A* 9/1975
Heckl.......................... 29/578 a Selectively doped p-type buffer layer are also provided …

SiC MESFETs are disclosed which utilize a semi-insulating SiC substrate which
substantially free of deep-level dopants. Utilization of the semi-insulating Substrate may …

A nitride semiconductor device used chiefly as an LD and an LED element. In order to
improve the output and to decrease Vf, the device is given either a three-layer structure in …