Optimizing DC and RF characteristics of pseudomorphic AlGaN/InGaN/GaN HEMT for GHz application
N Ahmad, S Rewari, V Nath - Serbian Journal of Electrical …, 2024 - doiserbia.nb.rs
This paper presents a design and in-depth analysis of DC and RF characteristics of
Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave …
Pseudomorphic AlGaN/InGaN/GaN High Electron Mobility Transistor (HEMT) for microwave …
Enhancing Reliability and RF Performance: The Impact of Fe Doped Back Barrier Optimization in GaN HEMTs
SA Franklin, S Chander, D Nirmal - 2024 7th International …, 2024 - ieeexplore.ieee.org
In this paper, we investigate the impact of the Fe doped back barrier thickness (T bb) on
AlGaN/GaN HEMT device. The Fe doping on back barrier significantly improves the electric …
AlGaN/GaN HEMT device. The Fe doping on back barrier significantly improves the electric …