A review of the preparation of carbon nitride films

S Muhl, JM Méndez - Diamond and Related Materials, 1999 - Elsevier
Using a semiempirical rule based on a range of existing hard materials, Liu and Cohen
predicted that some of the crystalline forms of C3N4 might have values of bulk modulus …

The effect of nitrogen addition to Ar/CH4 plasmas on the growth, morphology and field emission of ultrananocrystalline diamond

TD Corrigan, DM Gruen, AR Krauss, P Zapol… - Diamond and related …, 2002 - Elsevier
The effect of the addition of nitrogen to plasmas during the CVD growth of diamond films on
field emission properties has been studied. Ultrananocrystalline diamond with 5–15 nm …

Field emission properties of nitrogen-doped diamond films

AT Sowers, BL Ward, SL English… - Journal of applied …, 1999 - pubs.aip.org
Diamond has been considered as a material of choice for next-generation cold cathode
materials. The strong sp3 bonding character in diamond leads to a material with unique …

Correlation between the OES plasma composition and the diamond film properties during microwave PA-CVD with nitrogen addition

T Vandevelde, TD Wu, C Quaeyhaegens, J Vlekken… - Thin solid films, 1999 - Elsevier
The mechanisms of nitrogen incorporation in diamond are still an unsolved riddle. This is
mainly due to the complexity of the processes involved as they not only depend on empirical …

Raman spectroscopy study of the influence of processing conditions on the structure of polycrystalline diamond films

R Ramamurti, V Shanov, RN Singh… - Journal of Vacuum …, 2006 - pubs.aip.org
Diamond films are prepared by microwave plasma-enhanced chemical-vapor deposition on
Si (100) substrates using the H 2–Ar–CH 4 gases. Raman scattering data, including the …

Microcrystalline and nanocrystalline structure of diamond films grown by MPCVD with nitrogen additions: Study of transitional synthesis conditions

A Martyanov, I Tiazhelov, S Savin, V Voronov… - Journal of Crystal …, 2024 - Elsevier
This research explores the complex influence of nitrogen concentration and substrate
temperature on the resultant properties of polycrystalline diamond (PCD) films grown by …

Plasma chemistry of NO in complex gas mixtures excited with a surfatron launcher

JL Hueso, AR González-Elipe, J Cotrino… - The Journal of …, 2005 - ACS Publications
The plasma chemistry of NO has been investigated in gas mixtures with oxygen and/or
hydrocarbon and Ar as carrier gas. Surface wave discharges operating at microwave …

Mechanical properties of MWPECVD diamond coatings on Si substrate via nanoindentation

MA Nitti, G Cicala, R Brescia, A Romeo… - Diamond and related …, 2011 - Elsevier
The mechanical properties of polycrystalline diamond coatings with thickness varying from
0.92 to 44.65 μm have been analysed. The tested samples have been grown on silicon …

Effect of the admixture of N2 to low pressure, low temperature H2-CH4-CO2 microwave plasmas used for large area deposition of nanocrystalline diamond films

D Dekkar, A Puth, E Bisceglia… - Journal of Physics D …, 2020 - iopscience.iop.org
In a distributed antenna array reactor, microwave H 2-CH 4-CO 2 plasmas with admixture of
N 2 used for the low-temperature deposition of nanocrystalline diamond (NCD) films are …

Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

W Cao, D Gao, H Zhao, Z Ma - Functional Diamond, 2022 - Taylor & Francis
The epitaxial lateral growth of single-crystal diamond (SCD) using a plate-to-plate
microwave plasma chemical vapor deposition (MPCVD) reactor under high pressure is …