Germanium–tin (Ge1–x Sn x) semiconductors are a front-runner platform for compact mid-
infrared devices due to their tunable narrow bandgap and compatibility with silicon …

Silicon-compatible short-and midwave infrared emitters are highly sought after for on-chip
monolithic integration of electronic and photonic circuits to serve a myriad of applications in …

Silicon is indisputably the most advanced material for scalable electronics, but it is a poor
choice as a light source for photonic applications, due to its indirect band gap. The recently …

Achieving high crystalline quality germanium‐tin (Ge1− xSnx) semiconductors at Sn content
exceeding 10% is quintessential to implement the long sought‐after silicon‐compatible mid …

Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge
Sn) alloys are a versatile platform for scalable integrated mid-infrared photonics. These …

The band structures of Ge 1− x Sn x nanowires with low Sn contents at the Γ-valley and L-
valley under the [100] direction stress are studied via effective-mass theory, and we find that …

Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge $
_ {1-x} $ Sn $ _x $) alloys are a versatile platform for scalable integrated mid-infrared …

In the past decade, the increasing need for high-performance micro-and nanoelectronics
has driven the research on group IV heterostructure devices, which utilize quantum effects …

Atomic short-range order (SRO) in direct-bandgap GeSn for infrared photonics has recently
attracted attention due to its notable impact on band structures. However, the SRO in GeSn …

Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for
integrated photonics platforms. Despite the impressive progress in developing nanowire …