Mechanical strain effect on the optoelectronic properties and photocatalysis applications of layered AlN/GaN nanoheterostructure
Nitika, S Arora, DS Ahlawat - Journal of Molecular Modeling, 2024 - Springer
Context The aim of this work is to use first principles calculations to examine the effects of
different mechanical strains on the optoelectronic and photocatalytic capabilities of the …
different mechanical strains on the optoelectronic and photocatalytic capabilities of the …
GaN-based shallow-trench vertical Hall devices
K Ma, H Huang, N Sun, N Ding, Q Zuo, W Shan… - Applied Physics …, 2025 - pubs.aip.org
In this Letter, a GaN-based vertical Hall device is designed and experimentally fabricated,
offering an effective solution for in-plane magnetic field detection. By introducing a shallow …
offering an effective solution for in-plane magnetic field detection. By introducing a shallow …
Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors
The study aimed to investigate the underlying physics limiting the temperature stability and
performance of non-surface passivated Al 0.34 Ga 0.66 N/GaN Hall effect sensors, including …
performance of non-surface passivated Al 0.34 Ga 0.66 N/GaN Hall effect sensors, including …
Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study
ScAlN, with its ultra-wide band gap and ferroelectric properties, offers promising
enhancements for GaN-HEMTs expanding the device-application space. In this work, we …
enhancements for GaN-HEMTs expanding the device-application space. In this work, we …