Electrical characterization and modeling of GaN HEMTs at cryogenic temperatures
In this work, we present a phenomenological cryogenic model for gallium nitride (GaN) high
electron mobility transistors (HEMTs) with validity all the way down to a temperature of 10 K …
electron mobility transistors (HEMTs) with validity all the way down to a temperature of 10 K …
A generic and efficient globalized kernel mapping-based small-signal behavioral modeling for GaN HEMT
The work reported in this article explores a novel Particle Swarm Optimization (PSO) tuned
Support Vector Regression (SVR) based technique to develop the small-signal behavioral …
Support Vector Regression (SVR) based technique to develop the small-signal behavioral …
Hybrid small-signal modeling of GaN HEMTs based on improved genetic algorithm
J Zhang, X Hou, M Liu, S Yang, B Liu, J Wang… - Microelectronics …, 2022 - Elsevier
In this paper, an improved genetic algorithm-based hybrid direct-optimal extraction method
for small-signal model of GaN HEMT devices is proposed. Simulated annealing algorithm …
for small-signal model of GaN HEMT devices is proposed. Simulated annealing algorithm …
A reliable and efficient small‐signal parameter extraction method for GaN HEMTs
Y Chen, Y Xu, Y Luo, C Wang, Z Wen… - … Journal of Numerical …, 2020 - Wiley Online Library
In this paper, a reliable and efficient parameter extraction method for GaN high electron
mobility transistor (HEMT) small‐signal models has been proposed. By utilizing parameter …
mobility transistor (HEMT) small‐signal models has been proposed. By utilizing parameter …
Hybrid particle swarm optimization‐grey wolf optimization based small‐signal modeling applied to GaN devices
A Abushawish, A Jarndal - International Journal of RF and …, 2022 - Wiley Online Library
In this research, four different equivalent circuit models that characterize the substrate/buffer
loading effect for GaN high electron mobility transistor (HEMT) on Si substrate have been …
loading effect for GaN high electron mobility transistor (HEMT) on Si substrate have been …
Charge-based flicker noise modeling of GaN HEMTs down to cryogenic temperatures
In this letter, we present a charge-based model to describe the flicker/low-frequency noise
behavior in GaN HEMTs. We study flicker noise and introduce the model for frequencies …
behavior in GaN HEMTs. We study flicker noise and introduce the model for frequencies …
A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate …
In this paper, extrinsic and intrinsic parameters were extracted from the experimental S-
parameters using 16-and 22-element small signal equivalent circuit model for large gate …
parameters using 16-and 22-element small signal equivalent circuit model for large gate …
A new high-frequency HEMT GaN extrinsic capacitance extraction technique
In this letter, a new extraction technique is proposed to determine the GaN high-electron-
mobility transistor (HEMT) extrinsic capacitances using a small-signal model equivalent …
mobility transistor (HEMT) extrinsic capacitances using a small-signal model equivalent …
Modeling and analysis of double channel GaN HEMTs using a physics-based analytical model
In this work, we report the development of a new physics-based analytical model for current
and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility …
and charge characteristics of Double Channel (DC) Gallium Nitride High Electron Mobility …
Parasitic parameters extraction of InP HBT only from S-parameters measured under cut-off and normal bias conditions
J Qi, H Lu, R Zhao, S Yan, L Cheng, Y Zhang - Solid-State Electronics, 2022 - Elsevier
An improved parasitic parameters extraction method for InP heterojunction bipolar transistor
(HBT) is developed. The difference between this method and previous methods is that all …
(HBT) is developed. The difference between this method and previous methods is that all …