Data retention in flash memory devices, such as mirrorbit devices, is improved by reducing
the generation and/or diffusion of hydrogen ions during back end processing, such as …

An interconnect structure having improved electromigration (EM) reliability is provided. The
inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by …

In integrated circuit technology; an electromigration and diffusion sensitive conductor of a
metal such as copper and processing procedure therefore is provided, wherein, at a …

A new technique is disclosed in which a barrier/capping layer for a copper-based metal line
is formed by using a thermal-chemical treatment with a surface modification on the basis of a …

The dielectric constants of SiC and SiCN that are currently the subjects of much investigation
are both 4.5 to 5 or so and that of SiOC, 2.8 to 3.0 or so. With further miniaturization of the …

A semiconductor device has a silicide source/drain region is fabricated by growing silicon on
an epitaxial region including silicon and either germanium or carbon. In the method, a gate …

An interconnect structure and method of making the same are provided. The interconnect
structure includes a dielectric layer having a patterned opening, a metal feature disposed in …

An interconnect structure having improved electromigration (EM) reliability is provided. The
inventive interconnect structure avoids a circuit dead opening that is caused by EM failure by …

A method of forming an integrated circuit includes providing a semiconductor substrate,
forming a metallization layer over the semiconductor substrate, wherein the metallization …

Provided are methods and composition for forming an isolation structure on an integrated
circuit substrate. First, a trench is etched in the integrated circuit substrate. A lower dielectric …