Electrical and optical properties of graphite/ZnO nanorods heterojunctions
Graphite/ZnO nanorods heterojunctions were prepared by hydrothermal growth and
deposition of colloidal graphite. The electrical properties of these heterojunctions were …
deposition of colloidal graphite. The electrical properties of these heterojunctions were …
Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes
Current-voltage (as a function of temperature), capacitance-voltage, and 1/f noise
characteristics of Ni/GaN Schottky barrier diodes (SBDs) as function of rapid thermal …
characteristics of Ni/GaN Schottky barrier diodes (SBDs) as function of rapid thermal …
Graphite/ZnO nanorods junction for ultraviolet photodetectors
We report the fabrication of a graphite/ZnO nanorods (NRs) junction, which can act as a high-
sensitivity ultraviolet (UV) photodetector, prepared by deposition of colloidal graphite on top …
sensitivity ultraviolet (UV) photodetector, prepared by deposition of colloidal graphite on top …
PPV derivative/ZnO nanorods heterojunction: Fabrication, Characterization and Near-UV light sensor development
Abstract Poly (1, 4-phenylenevinylene) derivative (PPV-C 6) based solution was spin-coated
onto hydrothermally grown and vertically aligned ZnO nanorods (ZnO NRs). The …
onto hydrothermally grown and vertically aligned ZnO nanorods (ZnO NRs). The …
The comparison of electrical characteristics of Au/n-InP/In and Au/In2S3/n-InP/In junctions at room temperature
T Çakıcı, M Sağlam, B Güzeldir - Materials Science and Engineering: B, 2015 - Elsevier
Abstract We fabricated Au/n-InP/In and Au/In 2 S 3/n-InP/In junctions and investigated their
electrical properties at room temperature. The In 2 S 3 thin film has been directly formed on n …
electrical properties at room temperature. The In 2 S 3 thin film has been directly formed on n …
Transport properties of metal–semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles
Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic
deposition of Pt nanoparticles are investigated at different temperatures by the measurement …
deposition of Pt nanoparticles are investigated at different temperatures by the measurement …
Graphite/CdMnTe Schottky diodes and their electrical characteristics
LA Kosyachenko, R Yatskiv… - Semiconductor …, 2013 - iopscience.iop.org
The first Schottky diodes based on n-CdMnTe crystals with pronounced rectifying properties
are investigated. It is shown that the I–V characteristics of the diodes fabricated by printing …
are investigated. It is shown that the I–V characteristics of the diodes fabricated by printing …
Rapid thermal annealing effects on the electrical and structural properties of Ru/V/n-InP Schottky barrier diode
Abstract A Ru/V/n-InP Schottky barrier diode (SBD) is fabricated and investigated its
electrical and structural properties as a function of annealing temperature. Measurements …
electrical and structural properties as a function of annealing temperature. Measurements …
Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP
K Shanthi Latha, V Rajagopal Reddy - Indian Journal of Physics, 2017 - Springer
The electrical and transport properties of a fabricated bilayer Ru/Cr/n-InP Schottky diode
(SD) have been investigated at different annealing temperatures. Atomic force microscopy …
(SD) have been investigated at different annealing temperatures. Atomic force microscopy …
Efficient organic Schottky junction solar cells with a platinum chloride-treated PEDOT: PSS interfacial layer
We demonstrate highly efficient organic-based Schottky junction solar cells (OSJSCs)
obtained by poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)(PEDOT: PSS) …
obtained by poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)(PEDOT: PSS) …