Cutting-edge mid-wavelength infrared (MWIR) sensing technologies leverage infrared
photodetectors, memory units, and computing units to enhance machine vision. Real-time …

Avalanche photodiodes have emerged as a promising technology with significant potential
for various medical applications. This article presents an overview of the advancements and …

Silicon (Si)‐based photodetectors are cost‐effective, eco‐friendly, and compatible with on‐
chip complementary metal‐oxide‐semiconductor (CMOS) technology. However, expanding …

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome
by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) …

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum,
and it drops rapidly beyond 800 nm in near-infrared wavelengths. We have experimentally …

2D layered metal halide perovskites (MHPs) are a potential material for fabricating self-
powered photodetectors (PDs). Nevertheless, 2D MHPs produced via solution techniques …

Currently, the development trend of infrared detection systems is oriented towards achieving
smaller size, reduced weight, lower power consumption, decreased cost, and heightened …

Real-time characterization of microresonator dynamics is important for many applications. In
particular, it is critical for near-field sensing and understanding light–matter interactions …

High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a
wide range of applications, including telecommunications, data centers, spectroscopy …

High-performance pBn infrared photodetectors based on In 0.53 Ga 0.47 As/Ga 0.51 As 0.49
Sb type-II superlattices with an Al 0.85 Ga 0.15 AsSb barrier on an InP substrate have been …