With the global population prevalence of diabetes surpassing 463 million cases in 2019 and
diabetes leading to millions of deaths each year, there is a critical need for feasible, rapid …

Detection of Light provides a comprehensive overview of the important approaches to
photon detection from ultraviolet to submillimeter spectral regions. This expanded and fully …

In this review article, the important switch performance parameters such as actuation
voltage, capacitance ratio, radio frequency-scattering parameters (RF S-parameters), the …

The advancement in technology in semiconductor materials significantly contributed in
improvement of human life by bringing breakthrough in fabrication of optoelectronics and …

Nowadays, the development of wide bandgap-based devices in power electronics has
become more prominent to ameliorate the energy capability of devices. Furthermore, it can …

The detection of biomolecules by a Field Effect Transistor-based biosensor (BioFET) is
dictated by the sensor's intrinsic Signal-to-Noise Ratio (SNR). The detection limit of a …

Abstract In this work, High Electron Mobility Transistor is grown on various Substrates such
as silicon (Si), silicon carbide (SiC), and sapphire substrate to exhibit a negative threshold …

Gallium nitride (GaN) exhibits high internal spontaneous and piezoelectric polarizations,
leading to the formation of a two-dimensional electron gas (2DEG) channel in the …

With the rapid development of technologies, the third generation semiconductor is being
studied, as it is leading to the significant change in industry like the manufacture of PC …

Breakdown characteristic of GaN-HEMT with field plate (FP) technique is investigated.
Source field plate length (LFP) is varied and its impact on breakdown voltage is studied. The …