Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs
The future of power conversion at low-to-medium voltages (around 650 V) poses a very
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
Review of wide bandgap materials and their impact in new power devices
D Garrido-Diez, I Baraia - 2017 IEEE International workshop of …, 2017 - ieeexplore.ieee.org
Power electronic converters use semiconductors to satisfy the needs of different
applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can …
applications. Nowadays, these semiconductors are mainly based on Silicon (Si), which can …
A discretized proportional base driver for silicon carbide bipolar junction transistors
Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in
the on-state. This base current is usually made constant and is corresponding to the …
the on-state. This base current is usually made constant and is corresponding to the …
The impact of temperature and switching rate on dynamic transients of high-voltage silicon and 4H-SiC NPN BJTs: A technology evaluation
This paper reports the application of silicon bipolar junction transistor (BJT) modeling
techniques to the modeling of dynamic behavior of high-voltage 4H-SiC BJTs, and the …
techniques to the modeling of dynamic behavior of high-voltage 4H-SiC BJTs, and the …
High temperature unclamped inductive switching mode evaluation of SiC JFET
Silicon carbide (SiC) unipolar transistors are an efficient choice in the design of high
temperature 1200 V switching power supplies and dc-dc converters. To reduce the form …
temperature 1200 V switching power supplies and dc-dc converters. To reduce the form …
Rapidly maturing SiC junction transistors featuring current gain (β)> 130, blocking voltages up to 2700 V and stable long-term operation
SG Sundaresan, S Jeliazkov, B Grummel… - Materials Science …, 2014 - Trans Tech Publ
SiC npn Junction Transistors (SJTs) with current gains as high as 132, low on-resistance of
4 mΩ-cm2, and minimal emitter-size effect are demonstrated with blocking voltages> 600 V …
4 mΩ-cm2, and minimal emitter-size effect are demonstrated with blocking voltages> 600 V …
Static and switching characteristics of 1200 V SiC Junction Transistors with on-chip integrated Schottky rectifiers
S Sundaresan, S Jeliazkov, H Issa… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
A comprehensive evaluation of high-temperature (up to 200° C) on-state, blocking voltage
and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip …
and switching operation of 1200 V-class SiC Junction Transistors (SJTs) with on-chip …
Silicon Carbide Junction Field‐Effect Transistors (SiC JFETs)
V Veliadis - Wiley Encyclopedia of Electrical and Electronics …, 1999 - Wiley Online Library
Wide bandgap semiconductors like silicon carbide (SiC) are currently being developed for
high‐power/high‐temperature applications. Silicon carbide (SiC) is ideally suited for power …
high‐power/high‐temperature applications. Silicon carbide (SiC) is ideally suited for power …
Dynamic Transients and Reliability of High-Voltage Silicon & 4H-SiC Bipolar Junction Transistors Under Avalanche and Short-Circuits
M Hosseinzadehlish, S Jahdi, X Yuan… - PCIM Europe 2024; …, 2024 - ieeexplore.ieee.org
This paper explores the dynamic characteristics and performance of two commercial bipolar
junction transistors (BJTs) with the highest voltage ratings in class for each material: 800 V …
junction transistors (BJTs) with the highest voltage ratings in class for each material: 800 V …