Atomic layer deposition of RuO2 thin films on SiO2 using Ru (EtCp) 2 and O2 plasma

Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru (EtCp) 2

MG Kozodaev, YY Lebedinskii… - The Journal of …, 2019 - pubs.aip.org
This work demonstrates by in vacuo X-ray photoelectron spectroscopy and grazing-
incidence X-ray diffraction that Ru (EtCp) 2 and O* radical-enhanced atomic layer …
被引用次数：25 相关文章 所有 6 个版本

MEMS device built on substrate with ruthenium based contact surface material

A Minnick, CF Keimel, X Zhu - US Patent 12,148,580, 2024 - Google Patents
A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS)
switch device may comprise constructing the switch device on an insulating substrate. The …
相关文章 所有 2 个版本
[PDF] googleapis.com

MEMS device built on substrate with ruthenium based contact surface material

A Minnick, CF Keimel, X Zhu - US Patent 11,501,928, 2022 - Google Patents
(57) ABSTRACT A method of fabricating and packaging an ohmic micro electro-mechanical
system (MEMS) switch device may comprise constructing the switch device on an insulating …
被引用次数：1 相关文章 所有 4 个版本